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Ordering number : ENA1063
2SC5227A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5227A
Features
* * *
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=20mA 60* Conditions Ratings min typ max 1.0 10 270* Unit A A
Continued on next page. * : The 2SC5227A is classified by 20mA hFE as follows : Marking LN3 LN4 LN5 Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408AB TI IM TC-00001342 No. A1063-1/6
2SC5227A
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob Cre
2 S21e 1 2 S21e 2
Conditions VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz
Ratings min 5 typ 7 0.75 0.5 9 12 8 1.0 1.8 1.2 max
Unit GHz pF pF dB dB dB
NF
Package Dimensions
unit : mm (typ) 7013A-009
2.9
0.5
0.1
3
2.5
1.5
0.5
1
0.95
2
0.4
1 : Base 2 : Emitter 3 : Collector SANYO : CP
0.05
1.1
0.3
3 2
hFE -- IC
VCE=5V
2
fT -- IC
VCE=5V
Gain-Bandwidth Product, fT -- GHz
10 7 5
DC Current Gain, hFE
100 7 5 3 2
3 2
10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR08202
1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR08203
Collector Current, IC -- mA
3 2
Cob -- VCB
f=1MHz
Collector Current, IC -- mA
3
Cre -- VCB
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
2
Output Capacitance, Cre -- pF
1.0 7 5 3 2
1.0 7 5 3 2
0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
ITR08204
Collector-to-Base Voltage, VCB -- V
ITR07966
No. A1063-2/6
2SC5227A
14
S21e2 -- IC
f=1GHz
12
NF -- IC
VCE=5V f=1GHz
Forward Transfer Gain,S21e2 -- dB
12
10
10
Noise Figure, NF -- dB
5 7 2 3 5 7 100 2 ITR08206
8
V CE = 5V V CE =2 V
8
6
6
4
4
2
2
0
3
5
7
1.0
2
3
0
10
3
5
7 1.0
2
3
5 7 10
2
3
5
Collector Current, IC -- mA
240
PC -- Ta
Collector Current, IC -- mA
7 100 2 ITR08207
Collector Dissipation, PC -- mW
200
160
120
80
40
0 0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
ITR08208
No. A1063-3/6
2SC5227A
S Parameters (Common emitter)
f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10
25
f=100MHz, 200MHz to 2000MHz(200MHz Step) 90 120
z
0.1GH z
60
VCE=5V IC=20mA
30
j200 j250
150 0.1GH
2.0Hz
0
10
2.0GHz 2.0GHz
50 100 150 250
180
VCE=5V IC=7mA 2.0GHz VCE=2V 2.0GHz 0.1GHz IC=3mA 8 2.0GHz 4
12
16 20
0
--j10
VCE=2V IC=3mA
VCE=5V VCE=5V IC=20mA IC=7mA Hz 0.1GHz 1G 0.
--j25 --j50
0.
--j250 --j200 --j150
z
--j100 --120
ITR08209
1G
--150
--30
H
--60 --90
ITR08210
f=100MHz, 200MHz to 2000MHz(200MHz Step)
2.0GHz
f=100MHz, 200MHz to 2000MHz(200MHz Step)
VCE=5V IC=7mA
90 120 60
2.0GHz
2.0GHz
j50 j25 j100 j150
VCE=5V IC=20mA
150
30
j10
100
j200 j250
180
0.1GHz VCE=2V 0.1GHz IC=3mA 0.1GHz 0.04 0.08 0.12 0.16 0.2 0
0
10
25
50
150 250
2.0GHz
--j10 --150 --30
--j25 --120 --90 --60
ITR08211
--j250 2.0GHz --j200 =5V V =2V VCE CE IC=7mA I =3mA --j150 C --j100 --j50
2.0GHz
VCE=5V IC=20mA 0.1GHz
0.1 G 0.1 Hz GH z
ITR08212
No. A1063-4/6
2SC5227A
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.722 0.587 0.426 0.369 0.344 0.334 0.326 0.324 0.328 0.335 0.346 S11 --41.6 --73.2 --113.0 --136.6 --152.9 --165.7 --177.9 172.3 163.4 154.5 147.5 S21 17.352 13.419 8.371 5.914 4.593 3.750 3.178 2.784 2.476 2.246 3.073 S21 148.7 127.6 105.1 92.7 83.9 76.7 70.3 64.9 59.5 54.6 50.0 S12 0.029 0.046 0.067 0.084 0.102 0.121 0.141 0.162 0.183 0.204 0.226 S12 70.9 60.8 56.9 58.4 60.3 61.5 62.0 61.8 61.2 60.5 59.6 S22 0.883 0.710 0.507 0.423 0.382 0.360 0.350 0.341 0.334 0.328 0.328 S22 --21.3 --33.1 --40.7 --42.5 --43.9 --46.3 --49.1 --52.2 --56.4 --60.8 --65.4
VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.477 0.358 0.288 0.273 0.270 0.271 0.273 0.275 0.284 0.294 0.302 S11 --66.8 --104.1 --142.2 --159.8 --171.7 178.7 169.4 161.1 153.4 145.6 140.8 S21 28.090 17.995 9.903 6.777 5.181 4.209 3.554 3.085 2.749 2.479 2.295 S21 133.6 112.9 95.9 86.7 79.9 73.9 68.5 63.6 59.1 54.6 50.6 S12 0.022 0.035 0.057 0.081 0.104 0.129 0.153 0.177 0.202 0.224 0.248 S12 67.7 65.3 68.3 69.9 70.2 69.1 67.9 66.2 64.3 62.5 60.4 S22 0.726 0.506 0.350 0.299 0.278 0.269 0.264 0.258 0.253 0.249 0.248 S22 --32.7 --41.6 --42.4 --41.8 --43.2 --45.9 --49.6 --53.3 --58.3 --63.4 --68.7
VCE=2V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.858 0.769 0.607 0.528 0.486 0.460 0.453 0.440 0.441 0.447 0.454 S11 --30.5 --57.4 --97.1 --123.2 --141.6 --156.4 --169.4 179.8 170.1 160.4 152.5 S21 9.283 8.036 5.756 4.302 3.414 2.834 2.429 2.143 1.919 1.739 1.621 S21 157.3 138.7 113.9 98.1 87.0 78.0 70.3 63.6 57.4 51.7 46.4 S12 0.039 0.068 0.099 0.114 0.125 0.137 0.149 0.163 0.179 0.196 0.215 S12 73.6 61.4 48.4 44.4 43.9 45.4 47.5 49.2 50.8 52.3 53.3 S22 0.944 0.834 0.641 0.525 0.465 0.429 0.408 0.395 0.385 0.381 0.379 S22 --15.6 --27.5 --40.5 --46.5 --50.2 --53.7 --57.3 --60.9 --65.4 --70.1 --75.2
No. A1063-5/6
2SC5227A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice.
PS No. A1063-6/6

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